Language
EnglishEnglish
GermanGerman
JapaneseJapanese
FranceFrance
SwedenSweden
NetherlandsNetherlands
TurkeyTurkey
Russia<Russia

Follow us

facebook linkdin twitter whatsapp
Share

Special A-, R-, and M-plane Crystal Orientations Sapphire substrate

Specific Information
JXT Company provides sapphire substrates with special A-, R-, and M-plane orientations, tailored for advanced applications in optoelectronics, photonics, and epitaxial growth. These off-axis crystal orientations offer unique surface properties that enhance lattice matching, light extraction, and film quality in specific device structures. Although more complex to process than standard C-plane substrates, JXT’s precision engineering ensures consistent quality and reliability, supporting high-performance device manufacturing in demanding fields.
Get a free quote
  • specification
  • Properties
  •                             
     
    Item A/M/R-Plane Sapphire Substrates(2~6inch)
    Surface Orientation A-plane (11-20) ± 0.1° R-plane (1-102) ± 0.1° M-plane (1-100) ± 0.1°
    Diameter 50.8±0.1mm 100.0±0.2mm 150.0±0.3mm 50.8±0.1mm 100.0±0.2mm 150.0±0.3mm 50.8±0.1mm 100.0±0.2mm 150.0±0.3mm
    Thickness 430±25μm 650±25μm 1000±25μm 430±25μm 650±25μm 1000±25μm 430±25μm 650±25μm 1000±25μm
    Primary Flat Orientation M-plane ± 0.3° Counter clockwise 45 from C-axis A-plane ± 0.3°
    Primary Flat Length 16.0±1.0mm 30.0±1.0mm 47.5±2.0mm 16.0±1.0mm 30.0±1.0mm 47.5±2.0mm 16.0±1.0mm 30.0±1.0mm 47.5±2.0mm
    Front Surface Finish Epi-polished,Ra<0.3nm
    Back Surface Finish SSP:Fine-ground,Ra=0.8-1.2μm; DSP:Epi-polished,Ra<0.3nm
    Laser Mark Back side
    TTV ≤10μm ≤20μm ≤25μm ≤10μm ≤20μm ≤25μm ≤10μm ≤20μm ≤25μm
    BOW ≤15μm ≤25μm ≤35μm ≤15μm ≤25μm ≤35μm ≤15μm ≤25μm ≤35μm
    WARP ≤15μm ≤30μm ≤40μm ≤15μm ≤30μm ≤40μm ≤15μm ≤30μm ≤40μm
    Edge Exclusion ≤2 mm

     

    Customization specifications:

    * Various orientations such as A/R/M/N Plane, C off M(1°-10°), C off A(1°-10°).

    * Various sizes and shapes such as 10*10mm,8 inch,12inch

    * Various thicknesses:0.1~20mm

    * Various surface roughness such as slicing,lapping,polishing.

    * Sapphire crystal ingots are available.

  • The sapphire is a crystalline form of aluminum oxide(α-Al2O3) with a hexagonal structure, which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds. The chemical properties of sapphire crystal are very stable, insoluble in water, and excellent corrosion resistance to strong acids and strong alkalis. The sapphire crystal has a high hardness of 9 on the Mohs scale, a melting point of 2050°C, a boiling point of 3500°C, and a maximum working temperature of 1900°C. Sapphire wafer has high light transmission,low thermal conductivity,good electrical insulation,excellent mechanical properties, and good wear resistance and scratch resistance.

     

    Crystal Structure Hexagonal
    Lattice Constant(nm) a=4.76Å c=12.99Å
    Density(g/cm3) 3.98
    Melting point(℃) 2040
    Mohs Hardness(mohs) 9
    Dielectric Constant 9.3(A plane)
    11.5(C plane)
    Thermal Conductivity(W/cm.K) 0.46
    Thermal Expansion  6.7*10-6/k(C plane)           5.0*10-6/k(A plane)
    Refractive Index  1.762-1.777
    Transmission  Test sample:Sapphire:D76.2*4mm
    UV:200~380nm  74%~84%
    Visible light:380~760nm  85% 
    Infrared:760~1000nm      85%
    Far-Infrared:>1000nm   80%~100%

Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     网站统计