Language
EnglishEnglish
GermanGerman
JapaneseJapanese
FranceFrance
SwedenSweden
NetherlandsNetherlands
TurkeyTurkey
Russia<Russia

Follow us

facebook linkdin twitter whatsapp
Share

GaAs Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
Get a free quote
  • specification
  • Properties
  • Red Led  GaAs Epitaxial wafers(2~6inch)



    1.Epitaxial Parameters
    Layer Thickness Doping Concertration
    GaP 4000~8000nm 0.5~5E19 cm-3
    AlxGayInP 700~900nm 0.7~2E18 cm-3
    Alx1Gay1InP 400~700nm -
    AlxGayInP 800~1000nm 0.5~1E18 cm-3
    AlGaAs/AlAs 2000~3000nm 0.5~1E18 cm-3
    GaAs  ~3000nm 1~4E18 cm-3
    GaAs Substrate Thickness: 350μm
    PL Wavelength 570-665nm

    2.Substrate Parameters

    Substrate: GaAs Substrate
    Substrate Type: N Type (Si doping)
    Substrate Diameter: 50.8±0.1mm,100.0±0.3mm,150.0±0.5mm
    Substrate Thickness: 350±25μm, 1000±25μm

    3.  Sample Testing data

                                                               
    XRD-Rocking curve


    4. Reference:


    2"/3"/4"/6" GaAs substrate is available
    Single and double side polished GaAs substrates are available.

    Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com,shirley@jxtwafer.com
  • ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.

     

    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.

     

    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   

Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     网站统计