| Layer | Thickness | Doping Concertration |
| GaP | 4000~8000nm | 0.5~5E19 cm-3 |
| AlxGayInP | 700~900nm | 0.7~2E18 cm-3 |
| Alx1Gay1InP | 400~700nm | - |
| AlxGayInP | 800~1000nm | 0.5~1E18 cm-3 |
| AlGaAs/AlAs | 2000~3000nm | 0.5~1E18 cm-3 |
| GaAs | ~3000nm | 1~4E18 cm-3 |
| GaAs Substrate | Thickness: 350μm | |
| PL Wavelength | 570-665nm | |
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
