As advanced packaging and 3D integration technologies continue to accelerate, wafer thinning has become an irreversible trend across the semiconductor industry. From traditional packaging to heterogeneous integration, and from power devices to advanced logic, the required wafer thickness is being pushed to new limits. This article provides a systematic overview of ultra-thin wafers—what they are, why they are needed, the associated risks, and the major thinning technologies used in production.
For 8-inch and 12-inch wafers, industry standards generally categorize wafer thickness into the following classes:
Standard wafer: 600–775 μm
Thin wafer: 150–200 μm
Ultra-thin wafer: <100 μm
Extremely thin wafer: 50 μm, 30 μm, and as low as 10–20 μm
As the wafer thickness decreases, its mechanical and thermal properties change drastically—creating both technical opportunities and manufacturing challenges.
Wafer thinning is not merely a geometric change; it critically influences electrical, thermal, and structural behavior. Key drivers include:
In 3D integration, shorter TSVs reduce the signal path and significantly lower RC delay, improving high-speed interconnect performance.
Thinner substrates shorten conduction paths and reduce parasitic resistance.
Ultra-thin wafers enable shorter thermal paths and improved heat extraction—essential for HBM, AI accelerators, and power devices.
Consumer electronics continue to evolve toward thinner form factors, driving strict Z-height requirements and making wafer thinning a standard step in advanced packaging.
When wafer thickness reaches the sub-100 μm or even sub-50 μm level, its physical characteristics change dramatically. Key risks include:
Ultra-thin wafers become fragile and easily break under small mechanical stress.
Thermo-mechanical stress and material stack asymmetry cause noticeable warpage, affecting lithography, alignment, and overall process stability.
A 30 μm wafer behaves more like a flexible membrane than a rigid substrate, complicating automated and manual handling.
Metal layers, interconnects, and passivation structures on the device side can be damaged easily without proper protection.
These risks make dedicated wafer-supporting and stress-mitigation techniques essential for mass production.
To safely reduce wafer thickness while maintaining manufacturability and yield, the semiconductor industry has developed several mature thinning approaches, with DBG, Taiko, and temporary bonding being the most widely used.
DBG applies the concept of partial dicing first, thinning later.
Process flow:
The wafer front side is diced partially—deep enough to define die boundaries but without cutting through.
Mechanical integrity is maintained because the backside remains intact.
Backgrinding is then performed from the backside until the remaining silicon is removed, naturally separating individual dies.
Advantages:
Die edges are defined before thinning, reducing chipping.
Stress concentration during thinning is minimized.
DBG is widely used for wafers thinned below 150 μm.
The Taiko process achieves thinning through selective backgrinding.
Method:
Only the central active area of the wafer is thinned to the target thickness.
The outer peripheral region retains its original full thickness.
Benefits:
The thick rim preserves global wafer rigidity for safe handling.
Excellent compatibility with deep TSVs and advanced packaging flows.
Taiko is one of the most commonly adopted thinning methods in high-volume manufacturing.
When wafers are thinned to 50 μm, 30 μm, or even 10–20 μm, mechanical strength becomes insufficient for any conventional processing. Temporary bonding becomes indispensable.
Core principle:
The device wafer is bonded to a rigid carrier (glass, silicon, or composite) using a temporary adhesive or bonding material.
Key functions:
Mechanical reinforcement: Transforms a fragile ultra-thin wafer into a process-ready rigid structure.
Front-side protection: Shields sensitive device layers from mechanical and thermal damage.
Thermal and stress resistance: Supports high-temperature operations such as electroplating, TSV etching, and CMP.
Full process compatibility: Enables complex post-thinning steps including wafer-level packaging and 3D integration.
Temporary bonding has become a fundamental enabling technology for modern 3D IC and advanced wafer-level packaging.
With the rise of AI processors, HBM memory, 3D IC architectures, and high-performance power devices, the need for ultra-thin wafers continues to intensify. Technologies such as DBG, Taiko, and temporary bonding are no longer auxiliary processes—they are foundational to enabling next-generation semiconductor systems.
As bonding materials, carrier technologies, and low-stress processing continue to evolve, wafer thickness may reach the sub-10-μm level with high yield and low cost. Wafer thinning is not merely a structural evolution, but a crucial pathway to achieving higher device performance, greater integration density, and superior thermal efficiency.
In response to the rapidly increasing demand for ultra-thin substrates, JXT Technology Co., Ltd. provides customizable thinning solutions for a wide range of materials, including silicon carbide (SiC), sapphire substrate, Fused silica , and silicon wafers. Thickness can be tailored from conventional levels down to tens of micrometers, supporting diverse requirements in mechanical stability, electrical performance, and process compatibility. These solutions offer reliable material support for advanced packaging, 3D integration, and device development across multiple application fields.
As advanced packaging and 3D integration technologies continue to accelerate, wafer thin...
What Is Wafer Warp?Wafer warp refers to the global deviation of a semiconductor wafer fr...
I. Current Status of the Silicon Carbide Industry and Its Application ProspectsSilicon c...
