Silicon carbide (SiC) is a wide bandgap semiconductor material that has attracted a great deal of attention in recent years due to its outstanding mechanical, electrical, and thermal properties. It is a compound of silicon and carbon and is commonly used in the production of semiconductor devices such as diodes, MOSFETs, and power electronics. JXT Technology Co.,Ltd. offers excellent qulity Silicon Carbide wafers(Production Grade/Research Grade/Dummy Grade) with an advantage price as follows:
 

Picture1: 2-8 inch silicon carbide
   
 1.Properties of 4H-N Silicon Carbide wafer

   Crystal Structure：Hexagonal
   Lattice Constant: a=3.076 Å c=10.053 Å
    Density: 3.21 g/cm3
   Melting point: 2830℃
   Mohs Hardness：≈9.2 mohs
   Dielectric Constant: c~9.66
   Band Gap: 3.23 eV
   Breakdown Electrical Field: 3-5×106V/cm
   Thermal Conductivity: a~4.2 W/cm·K  c~3.7 W/cm·K
   Thermal Expansion: 4-5×10-6/K
   Refractive Index@750nm：no = 2.61 ne = 2.66
 
   2. Specification of 4H-N Silicon Carbide wafer

   Diameter：50.8mm/100mm/150mm/200mm
   Thickness: 350μm/1000μm
   Surface Orientation: Off-Axis：4°toward <11-20>±0.5°
   Primary Flat Orientation: Parallel to <11-20>±1°
   Primary Flat Length: 16mm/32.5mm/47.5mm/Notch
   Resistivity: 0.015-0.028Ω.cm
   Front Surface Finish: Si-Face：CMP,Ra<0.5nm
   Back Surface Finish:  C-Face：Optical Polish,Ra<1nm
   Laser Mark: Back side(C-Face)
   TTV: 10-20μm
   BOW: 25-60μm
   WARP：30-80μm

Picture 2: Specification of 4H-N Silicon Carbide wafer
 
3.Application of Silicon Carbide Wafer

Because of SiC wide band gap, high thermal conductivity, high electrical conductivity, a high melting point, power electronics, where it can operate at temperatures up to 600°C and other advanced properties, SiC wafer is an extremely versatile and high-performance material that has a wide range of applications in a variety of industries. 
Silicon Carbide unique combination of electrical, thermal, and mechanical properties make it an ideal choice for high-temperature, high-power, and high-stress applications. With ongoing research and development, it is expected that SiC will continue to play an important role in the development of advanced technologies in the years to come.