Language

SiC Substrate wafer

SiC Substrate wafer

Language

Follow us

linkdin

Blogs

About Us

Blogs

HOME > ABOUT US > Blogs

8inch Silicon Carbide Ingot

published on 2025-04-24

8inch Silicon Carbide Ingot can be customized

4H-N Type
Diameter:200mm

Thickness: 12.88mm

As follow:

Share

Hot news

Progress in Silicon Carbide EpitaxyTechnology: Empowering Next-Generation Power and RF Devices

As a core material of the third-generation wide-bandgap semiconductors, Silicon Carbide ...

Learn more >>
6 Core Technical Parameters to Focus on When Purchasing 4H-Semi-Insulating Silicon Carbide Substrates

As the third-generation wide-bandgap semiconductor industry develops rapidly, 4H-semi-in...

Learn more >>
The Key Role and Technological Evolution of 4H-Semi-Insulating SiC Substrates in GaN Epitaxy

Abstract: Gallium Nitride (GaN), a core third-generation wide-bandgap semiconductor, is ...

Learn more >>

We Provide Customers with High-quality SiC, Sapphire Wafers and Substrates
Products Silicon Carbide Wafer (SiC Wafer) Silicon Carbide Epitaxial Wafer Sapphire Substrate Wafer Quartz glass wafer Silicon Wafer CVD Diamond Substrate AlN on Sapphire Epitaxial Wafer Laser processing
Technical Support
About Us Company Profile Blogs
Contact TEl:+86 18961736370 E-mail:anna@jxtwafer.com Address: No.79 Zhongshan South Road, Wuxi City, China.

2022 © SiC Wafers and GaN Wafers Manufacturer 网站统计