GaAs: :
● Typical structure: ● Typical Specification:
1.GaAs on GaAs n-type, p-type and semi-insulating GaAs on GaAs
2.InGaAsP/GaAs InGaAsP/GaAs (typically latice-matched)
3.InAs/GaAs InAs/GaAs quantum dots
4.AlGaAs/GaAs QW AlGaAs/GaAs QW edge emitting lasers (680 - 870nm)
5.AlGaAs/GaAs VCSELs AlGaAs/GaAs VCSELs structures
6.AlGaAs/GaAs HEMTs AlGaAs/GaAs HEMTs structures
7.InP on InP n-type, p-type and undoped InP on InP
8.InGaAs/InP InGaAs/InP (typically latice-matched)
9.InGaAsP/InP InGaAsP/InP passive devices
10.InGaAsP/InP QW lasers InGaAsP/InP QW edge emitting lasers and SOAs 1300-1600nm
11.InGaAsP/InP VCSEL InGaAsP/InP VCSEL structures
12.InAlAs/InGaAs/InP HEMTs InAlAs/InGaAs/InP HEMTs structures
13.GaAs pHEMTs GaAs pHEMTs structure
14.GaAs MESFETs & HFETs GaAs MESFETs & HFETs structure
15.GaAs Schottky Diodes GaAs Schottky Diodes structure
16.InGaP GaAs HBTs InGaP GaAs HBTs structure
17.AlGaAs GaAs HBTs AlGaAs GaAs HBTs structure
18.AlGaAs GaAs BiFETs / BiHEMTs AlGaAs GaAs BiFETs / BiHEMTs structure
● Reference:
1"/2"/3"/ 4"/ 6" GaN/InP substrate (10*10mm etc.) is available.
Single and double side polished sapphires are available.
● Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
